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BAP64-04 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BAP64-04
Description  Silicon PIN diode
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAP64-04 Datasheet(HTML) 3 Page - NXP Semiconductors

  BAP64-04 Datasheet HTML 1Page - NXP Semiconductors BAP64-04 Datasheet HTML 2Page - NXP Semiconductors BAP64-04 Datasheet HTML 3Page - NXP Semiconductors BAP64-04 Datasheet HTML 4Page - NXP Semiconductors BAP64-04 Datasheet HTML 5Page - NXP Semiconductors BAP64-04 Datasheet HTML 6Page - NXP Semiconductors BAP64-04 Datasheet HTML 7Page - NXP Semiconductors  
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1999 Jun 16
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP64-04
ELECTRICAL CHARACTERISTICS
Tj = 25
°C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
IF =50mA
0.95
1.1
V
IR
reverse leakage current
VR = 175 V
−−
10
µA
VR =20V
−−
1
µA
Cd
diode capacitance
VR =0; f = 1MHz
0.52
pF
VR =1V; f=1MHz
0.37
0.5
pF
VR =20V; f=1MHz
0.23
0.35
pF
rD
diode forward resistance
IF = 0.5 mA; f = 100 MHz; note 1
20
40
IF = 1 mA; f = 100 MHz; note 1
10
20
IF = 10 mA; f = 100 MHz; note 1
23.8
IF = 100 mA; f = 100 MHz; note 1
0.7
1.35
τL
charge carrier life time
when switched from IF =10mA to
IR =6 mA; RL = 100
Ω;
measured at IR =3mA
1.55
−µs
LS
series inductance
1.4
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
220
K/W


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