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BA891 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BA891
Description  Band-switching diode
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BA891 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1998 Aug 31
2
Philips Semiconductors
Product specification
Band-switching diode
BA891
FEATURES
• Ultra small plastic SMD package
• Low diode capacitance:
max. 1.05 pF
• Low diode forward resistance:
max. 0.7
• Small inductance.
APPLICATIONS
• Low loss band-switching in VHF
television tuners
• Surface mount band-switching
circuits.
DESCRIPTION
The BA891 is a planar, high
performance band-switching diode in
the ultra small SOD523 SMD plastic
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD523) and symbol.
Marking code: 7.
The marking band indicates the cathode.
handbook, halfpage
12

Top view
MAM405
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
35
V
IF
continuous forward current
100
mA
Ptot
total power dissipation
Ts =90 °C
715
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF =10mA
1V
IR
reverse current
VR =30V
20
nA
Cd
diode capacitance
f = 1 MHz; note 1; see Fig.2
VR = 1 V
0.8
1.05
pF
VR = 3 V
0.65
0.9
pF
rD
diode forward resistance
f = 100 MHz; note 1; see Fig.3
IF = 3 mA
0.45
0.7
IF = 10 mA
0.36
0.5
LS
series inductance
0.6
nH


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