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BA792 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BA792 Datasheet(HTML) 3 Page - NXP Semiconductors |
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1996 Mar 13 3 Philips Semiconductors Product specification Band-switching diode BA792 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 100 mA 1.1 V IR reverse current VR = 20 V 10 nA VR = 20 V; Tamb =75 °C1 µA Cd diode capacitance VR = 3 V; f = 1 to 100 MHz; note 1 1.1 pF rD diode forward resistance IF = 3 mA; f = 200 MHz; note 1 0.7 Ω SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 315 K/W MOUNTING Reflow soldering Follow standard reflow soldering techniques to ensure correct application of solder paste and placement of the SOD110 package (see Fig.2). Dimensions in mm. Fig.2 SOD110 reflow soldering pattern. handbook, halfpage MGC119 ,, ,, ,,, ,,, 3.00 1.25 1.00 1.00 ,, ,, ,,, ,,, Wave soldering Before wave soldering, attach SOD110 packages to the printed-circuit boards using a small dot of thermo-setting epoxy or UV-curing adhesive centred between the soldering lands (see Fig.3). Dimensions in mm. Fig.3 SOD110 wave soldering pattern. handbook, halfpage MGC126 ,, ,, 3.40 1.25 1.10 ,, ,, ,,, ,,, 1.10 ,,, ,,, |
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