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BA592 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BA592
Description  Band-switching diode
Download  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BA592 Datasheet(HTML) 3 Page - NXP Semiconductors

  BA592 Datasheet HTML 1Page - NXP Semiconductors BA592 Datasheet HTML 2Page - NXP Semiconductors BA592 Datasheet HTML 3Page - NXP Semiconductors BA592 Datasheet HTML 4Page - NXP Semiconductors BA592 Datasheet HTML 5Page - NXP Semiconductors BA592 Datasheet HTML 6Page - NXP Semiconductors BA592 Datasheet HTML 7Page - NXP Semiconductors BA592 Datasheet HTML 8Page - NXP Semiconductors  
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1998 May 07
3
Philips Semiconductors
Preliminary specification
Band-switching diode
BA592
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF =10mA
−−
1V
IR
reverse current
VR =20V
−−
20
nA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; note 1
0.92
1.4
pF
VR = 3 V; f = 1 MHz; note 1
0.6
0.85
1.1
pF
rD
diode forward resistance
IF = 3 mA; f = 100 MHz; note 1
0.45
0.7
IF = 10 mA; f = 100 MHz; note 1
0.36
0.5
1/gp
reverse resistance
VR = 1 V; f = 100 MHz; note 1
100
k
LS
series inductance
2
nH
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
120
K/W
GRAPHICAL DATA
Fig.2
Forward resistance as a function of
forward current; typical values.
f = 100 MHz; Tj =25 °C.
0.1
1
10
0.1
1
10
100
IF (mA)
rD
(
Ω)
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
0
0.4
0.8
1.2
1.6
2
0
102030
VR (V)
Cd
(pF)


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