 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BA423AL Datasheet(PDF) 2 Page - NXP Semiconductors |
|
||||||||||||||||||||||||||||||
BA423AL Datasheet(HTML) 2 Page - NXP Semiconductors |
|
|
2 / 4 page  1996 Mar 13 2 Philips Semiconductors Product specification AM band-switching diode BA423AL FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switching in AM radio receivers. DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. Fig.1 Simplified outline (SOD80C) and symbol. handbook, 4 columns MAM061 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on a FR4 printed-circuit board. SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 20 V IF continuous forward current − 50 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 50 mA; see Fig.2 0.9 V IR reverse current see Fig.3 VR = 20V 100 nA VR = 20 V; Tj = 125 °C5 µA Cd diode capacitance f = 1 MHz; VR = 3 V; see Fig.4 2.5 pF rD diode forward resistance IF = 10 mA; f = 1 MHz; see Fig.5 1.2 Ω SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 300 K/W Rth j-a thermal resistance from junction to ambient note 1 375 K/W |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
