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BA423A Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BA423A
Description  AM band-switching diode
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BA423A Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1996 Mar 13
2
Philips Semiconductors
Product specification
AM band-switching diode
BA423A
FEATURES
• Continuous reverse voltage:
max. 20 V
• Continuous forward current:
max. 50 mA
• Low diode capacitance:
max. 2.5 pF
• Low diode forward resistance:
max. 1.2
Ω.
APPLICATION
• Band switching in AM radio
receivers.
DESCRIPTION
Planar band-switching diode in a hermetically sealed glass SOD68
(DO-34) package.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
The diodes are type branded.
handbook, halfpage
MAM156
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board without metallization pad.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
20
V
IF
continuous forward current
50
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 50 mA; see Fig.2
0.9
V
IR
reverse current
see Fig.3
VR = 20V
100
nA
VR = 20 V; Tj = 125 °C5
µA
Cd
diode capacitance
f = 1 MHz; VR = 3 V; see Fig.4
2.5
pF
rD
diode forward resistance
IF = 10 mA; f = 1 MHz; see Fig.5
1.2
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W


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