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TPS74401RGWTG4 Datasheet(PDF) 3 Page - Texas Instruments |
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TPS74401RGWTG4 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 22 page  www.ti.com ELECTRICAL CHARACTERISTICS TPS74401 SBVS066D – DECEMBER 2005 – REVISED AUGUST 2006 At V EN = 1.1V, VIN = VOUT + 0.3V, CIN = CBIAS = 0.1µF, COUT = 10µF, IOUT = 50mA, VBIAS = 5.0V, and TJ = –40°C to +125°C, unless otherwise noted. Typical values are at T J = +25°C. TPS74401 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIN Input voltage range VOUT + VDO 5.5 V VBIAS Bias pin voltage range 2.375 5.25 V VREF Internal reference (Adj.) TJ = +25°C 0.796 0.8 0.804 V Output voltage range VIN = 5V, IOUT = 1.5A, VBIAS = 5V VREF 3.6 V VOUT Accuracy(1) 2.97V ≤ V BIAS ≤ 5.25V, 50mA ≤ IOUT ≤ 3.0A –1 ±0.2 +1 % VOUT (NOM) + 0.3 ≤ VIN ≤ 5.5V, QFN 0.0005 0.05 VOUT/VIN Line regulation %/V VOUT (NOM) + 0.3 ≤ VIN ≤ 5.5V, DDPAK 0.0005 0.06 0mA ≤ I OUT ≤ 50mA 0.013 %/mA VOUT/IOUT Load regulation 50mA ≤ I OUT ≤ 3.0A 0.03 %/A IOUT = 3.0A, VBIAS – VOUT (NOM) ≥ 1.62V, QFN 115 195 VIN dropout voltage(2) mV IOUT = 3.0A, VBIAS – VOUT (NOM) ≥ 1.62V, VDO 120 240 DDPAK VBIAS dropout voltage(2) IOUT = 3.0A, VIN = VBIAS 1.62 V VOUT = 80% × VOUT (NOM), QFN 3.8 6.0 ICL Current limit A VOUT = 80% × VOUT (NOM), DDPAK 3.5 6.0 IBIAS Bias pin current IOUT = 0mA to 3.0A 2 4 mA Shutdown supply current ISHDN VEN ≤ 0.4V 1 100 µA (VIN) IFB Feedback pin current(3) IOUT = 50mA to 3.0A –250 95 250 nA 1kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 73 Power-supply rejection dB 800kHz, IOUT = 1.5A, VIN = 1.8V, (VIN to VOUT) 42 VOUT = 1.5V PSRR 1kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 62 Power-supply rejection dB 800kHz, IOUT = 1.5A, VIN = 1.8V, (VBIAS to VOUT) 50 VOUT = 1.5V 100Hz to 100kHz, IOUT = 1.5A, Noise Output noise voltage 16 × V OUT µV RMS CSS = 0.001µF %VOUT droop during load VTRAN IOUT = 100mA to 3.0A at 1A/µs, COUT = 0µF 4 %VOUT transient tSTR Minimum startup time IOUT = 1.5A, CSS = open 100 µs ISS Soft-start charging current VSS = 0.4V 0.5 0.73 1 µA VEN, HI Enable input high level 1.1 5.5 V VEN, LO Enable input low level 0 0.4 V VEN, HYS Enable pin hysteresis 50 mV VEN, DG Enable pin deglitch time 20 µs IEN Enable pin current VEN = 5V 0.1 1 µA VIT PG trip threshold VOUT decreasing 86.5 90 93.5 %VOUT VHYS PG trip hysteresis 3 %VOUT VPG, LO PG output low voltage IPG = 1mA (sinking), VOUT < VIT 0.3 V IPG, LKG PG leakage current VPG = 5.25V, VOUT > VIT 0.03 1 µA Operating junction TJ –40 +125 °C temperature Shutdown, temperature increasing +155 Thermal shutdown TSD °C temperature Reset, temperature decreasing +140 (1) Adjustable devices tested at 0.8V; external resistor tolerance is not taken into account. (2) Dropout is defined as the voltage from the input to VOUT when VOUT is 2% below nominal. (3) IFB current flow is out of the device. 3 Submit Documentation Feedback |
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