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BA277 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BA277
Description  Band-switching diode
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BA277 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1998 May 06
2
Philips Semiconductors
Product specification
Band-switching diode
BA277
FEATURES
• Small plastic SMD package
• Continuous reverse voltage: max. 35 V
• Continuous forward current: max. 100 mA
• Low diode capacitance: max. 1.2 pF
• Low diode forward resistance: max. 0.7 Ω.
APPLICATIONS
• Low loss band switching in VHF television tuners.
• Surface mount band-switching circuits.
DESCRIPTION
Planar high performance band-switching diode in a small
plastic SOD523 (SC-79) SMD package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1
Simplified outline (SOD523; SC-79)
and symbol.
Marking code: 1.
handbook, halfpage
12


Top view
MAM399
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
35
V
IF
continuous forward current
100
mA
Ptot
total power dissipation
Ts =90 °C
715
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF =10mA
1
V
IR
reverse current
VR = 25 V
50
nA
VR = 20 V; Tamb =75 °C1
µA
Cd
diode capacitance
f = 1 MHz; VR = 6 V; note 1; see Fig.2
1.2
pF
rD
diode forward resistance
IF = 2 mA; f = 100 MHz; note 1; see Fig.3
0.7
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering-point
85
K/W


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