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BA277 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BA277 Datasheet(HTML) 2 Page - NXP Semiconductors |
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1998 May 06 2 Philips Semiconductors Product specification Band-switching diode BA277 FEATURES • Small plastic SMD package • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.2 pF • Low diode forward resistance: max. 0.7 Ω. APPLICATIONS • Low loss band switching in VHF television tuners. • Surface mount band-switching circuits. DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523 (SC-79) SMD package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD523; SC-79) and symbol. Marking code: 1. handbook, halfpage 12 Top view MAM399 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 35 V IF continuous forward current − 100 mA Ptot total power dissipation Ts =90 °C − 715 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF =10mA 1 V IR reverse current VR = 25 V 50 nA VR = 20 V; Tamb =75 °C1 µA Cd diode capacitance f = 1 MHz; VR = 6 V; note 1; see Fig.2 1.2 pF rD diode forward resistance IF = 2 mA; f = 100 MHz; note 1; see Fig.3 0.7 Ω SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering-point 85 K/W |
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