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M68761 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M68761
Description  SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M68761 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
M68761
MITSUBISHI RF POWER MODULE
Nov. ´97
2-R1.5
5
6
4
2
1
3
OUTLINE DRAWING
PIN:
Pin
: RF INPUT
VDD1: 1st DRAIN BIAS SUPPLY
VGG : GATE BIAS SUPPLY
VDD2: 2nd DRAIN BIAS SUPPLY
PO
: RF OUTPUT
GND: FIN
H15
Dimensions in mm
BLOCK DIAGRAM
1
2
3
4
5
-30
4
dBc
Stability
No degradation or
destroy
Symbol
Parameter
Test conditions
Limits
Min
Max
Unit
f
PO
ρin
ηT
Frequency range
Output power
Input VSWR
Total efficiency
Load VSWR tolerance
VDD=12.5V, VGG=3.5V, Pin=1mW,
ZG=ZL=50
ZG=ZL=50
Ω, VDD=10-16V,
Load VSWR <4:1
VDD=15.2V, Pin=1mW,
PO=6W (VGG Adjust), ZL=20:1
820
851
No parasitic oscillation
MHz
W
%
2fO
2nd. harmonic
33
6
PO=6W(VGG=Adjust), VDD=12.5V,
Pin=1mW(CW), ZG=ZL=50
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS (Tc=25
°C, ZG=ZL=50Ω unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS (Tc=25
°C unless otherwise noted)
Note. Above parameters are guaranteed independently.
Symbol
Parameter
Conditions
Ratings
Unit
V
17
VDD
Supply voltage
V
4
VGG
Gate bias voltage
mW
10
Pin
Input power
W
10
PO
Output power
°C
-30 to +100
TC (OP)
Operation case temperature
°C
-40 to +100
Tstg
Storage temperature
ZG=ZL=50
f=820-851MHz, ZG=ZL=50
f=820-851MHz, ZG=ZL=50
f=820-851MHz, ZG=ZL=50
42
37
14.7
27.4
30
9.6
32.4
19.7
6


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