CY7C1357C-133BGC datasheet(10/32 Pages) CYPRESS

Part #	CY7C1357C-133BGC

Description	9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

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Manufacturer	CYPRESS [Cypress Semiconductor]

Direct Link	http://www.cypress.com

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10 / 32 page

PRELIMINARY

CY7C1355C

CY7C1357C

Document #: 38-05539 Rev. **

Page 10 of 33

.

Interleaved Burst Address Table

(MODE = Floating or VDD)

First

Address

A1: A0

Second

Address

A1: A0

Third

Address

A1: A0

Fourth

Address

A1: A0

00

01

10

11

01

00

11

10

11

00

01

11

10

01

00

Linear Burst Address Table

(MODE = GND)

First

Address

A1: A0

Second

Address

A1: A0

Third

Address

A1: A0

Fourth

Address

A1: A0

00

01

10

11

01

10

11

00

10

11

00

01

11

00

01

10

ZZ Mode Electrical Characteristics

Parameter

Description

Test Conditions

Min.

Max.

Unit

IDDZZ

Sleep mode standby current

ZZ > VDD – 0.2V

35

mA

tZZS

Device operation to ZZ

ZZ > VDD – 0.2V

2tCYC

ns

tZZREC

ZZ recovery time

ZZ < 0.2V

2tCYC

ns

tZZI

ZZ active to sleep current

This parameter is sampled

2tCYC

ns

tRZZI

ZZ Inactive to exit sleep current

This parameter is sampled

0

ns

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CY7C1357C-133BGC Datasheet(PDF) 10 Page - Cypress Semiconductor

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