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BAW101S Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAW101S Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 10 page 2003 May 13 2 Philips Semiconductors Product specification High voltage double diode BAW101S FEATURES • Small plastic SMD package • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Electrically insulated diodes. APPLICATIONS • High voltage switching • Automotive • Communication. DESCRIPTION The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. MARKING Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. PINNING TYPE NUMBER MARKING CODE(1) BAW101S K2 ∗ PIN DESCRIPTION 1 anode 1 2 n.c. 3 cathode 2 4 anode 2 5 n.c. 6 cathode 1 handbook, halfpage MBL892 Top view 13 2 4 5 6 13 2 6 4 5 Fig.1 Simplified outline (SOT363) and symbol. |
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