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CD40105BMS Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # CD40105BMS
Description  CMOS FIFO Register
Download  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

CD40105BMS Datasheet(HTML) 7 Page - Renesas Technology Corp

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CD40105BMS
FN3353 Rev 0.00
Page 7 of 10
December 1992
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
IDD
 1.0A
Output Current (Sink)
IOL5
 20% x Pre-Test Reading
Output Current (Source)
IOH5A
 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
 -0.5V
OSCILLATOR
50kHz
25kHz
Static Burn-In 1 Note 1
2, 10 - 14
1, 3 - 9, 15
16
Static Burn-In 2 Note 1
2, 10 - 14
8
1, 3 - 7, 9, 15, 16
Dynamic Burn-In Note 1
-
1, 8, 9
16
2, 10 - 14
3, 15
4 - 7
Irradiation Note 2
2, 10 - 14
8
1, 3 - 7, 9, 15, 16
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K
 5%, VDD = 18V  0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V
 0.5V


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