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H7N0308AB Datasheet(PDF) 3 Page - Renesas Technology Corp |
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H7N0308AB Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page H7N0308AB Rev.2, Aug. 2002, page 3 of 9 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 30 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA V GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — 10 µA V DS = 30 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.5 V I D = 1 mA, VDS = 10 V Note 1 Static drain to source on state R DS(on) — 3.8 4.8 m Ω I D = 35 A, VGS = 10 V Note 1 resistance — 6.0 8.5 m Ω I D = 35 A, VGS = 4.5 V Note 1 Forward transfer admittance |y fs| 54 90 — S I D = 35 A, VDS = 10 V Note 1 Input capacitance Ciss — 3350 — pF V DS = 10 V Output capacitance Coss — 840 — pF V GS = 0 Reverse transfer capacitance Crss — 480 — pF f = 1MHz Total gate charge Qg — 52 — nc V DD = 10 V Gate to source charge Qgs — 11 — nc V GS = 10 V Gate to drain charge Qgd — 10 — nc I D = 70 A Turn-on delay time t d(on) — 30 — ns V GS = 10 V, ID = 35 A Rise time t r — 370 — ns R L =0.29 Ω Turn-off delay time t d(off) — 80 — ns R g =4.7 Ω Fall time t f — 27 — ns Body–drain diode forward voltage V DF — 0.93 — V I F = 70 A, VGS = 0 Body–drain diode reverse recovery time t rr — 60 — ns I F = 70 A, VGS = 0 diF/ dt =50 A/µs Notes: 1. Pulse test |
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