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M68745L Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. M68745L
Description  SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M68745L Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
M68745L
MITSUBISHI RF POWER MODULE
Nov. ´97
TYPICAL PERFORMANCE DATA
6
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
FREQUENCY f (MHz)
60
0
760 780 800 820 840
880 900
ηT
PO
ρin
50
20
4
2
1
0
5
3
30
40
10
VDD=7.2V
VGG=5V
Pin=1mW
ZG=ZL=50
860
10
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
INPUT POWER Pin (dBm)
100
0
-20 -15 -10
-5
10.00
1.00
0.01
-30
0
f=806MHz
VDD=7.2V
VGG=5V
ZG=ZL=50
ηT
PO
10
5
-25
1
0.10
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
GATE VOLTAGE VGG (V)
50
25
0
35
15
5.0
4.0
3.0
1.0
0.0
10
f=806MHz
VDD=7.2V
Pin=1mW
ZG=ZL=50
3.0
4.0
2.5
5.0
2.0
0.5
3.5
4.5
4.5
3.5
1.5
2.5
40
45
30
20
5
PO
ηT
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
DRAIN SUPPLY VOLTAGE VDD (V)
40
0
50
30
14
8
6
2
0
20
7
9
11
4
12
4
10
10
8
5
ηT
PO
60
12
70
10
6
f=806MHz
VGG=5V
Pin=1mW
ZG=ZL=50
10
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
INPUT POWER Pin (dBm)
100
0
-20 -15 -10
-5
10.00
1.00
0.01
-30
0
f=870MHz
VDD=7.2V
VGG=5V
ZG=ZL=50
ηT
PO
10
5
-25
1
0.10
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
GATE VOLTAGE VGG (V)
50
25
0
35
15
5.0
4.0
3.0
1.0
0.0
10
3.0
4.0
2.5
5.0
2.0
0.5
3.5
4.5
4.5
3.5
1.5
2.5
40
45
30
20
5
PO
ηT
f=870MHz
VDD=7.2V
Pin=1mW
ZG=ZL=50


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