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M68745L Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M68745L Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 3 page 
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO M68745L MITSUBISHI RF POWER MODULE Nov. ´97 TYPICAL PERFORMANCE DATA 6 OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY FREQUENCY f (MHz) 60 0 760 780 800 820 840 880 900 ηT PO ρin 50 20 4 2 1 0 5 3 30 40 10 VDD=7.2V VGG=5V Pin=1mW ZG=ZL=50 Ω 860 10 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER INPUT POWER Pin (dBm) 100 0 -20 -15 -10 -5 10.00 1.00 0.01 -30 0 f=806MHz VDD=7.2V VGG=5V ZG=ZL=50 Ω ηT PO 10 5 -25 1 0.10 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE GATE VOLTAGE VGG (V) 50 25 0 35 15 5.0 4.0 3.0 1.0 0.0 10 f=806MHz VDD=7.2V Pin=1mW ZG=ZL=50 Ω 3.0 4.0 2.5 5.0 2.0 0.5 3.5 4.5 4.5 3.5 1.5 2.5 40 45 30 20 5 PO ηT OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE DRAIN SUPPLY VOLTAGE VDD (V) 40 0 50 30 14 8 6 2 0 20 7 9 11 4 12 4 10 10 8 5 ηT PO 60 12 70 10 6 f=806MHz VGG=5V Pin=1mW ZG=ZL=50 Ω 10 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER INPUT POWER Pin (dBm) 100 0 -20 -15 -10 -5 10.00 1.00 0.01 -30 0 f=870MHz VDD=7.2V VGG=5V ZG=ZL=50 Ω ηT PO 10 5 -25 1 0.10 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE GATE VOLTAGE VGG (V) 50 25 0 35 15 5.0 4.0 3.0 1.0 0.0 10 3.0 4.0 2.5 5.0 2.0 0.5 3.5 4.5 4.5 3.5 1.5 2.5 40 45 30 20 5 PO ηT f=870MHz VDD=7.2V Pin=1mW ZG=ZL=50 Ω |
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