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M68745L Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M68745L Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO M68745L MITSUBISHI RF POWER MODULE Nov. ´97 45 42 2-R1.5 5 (36.5) 18 5 8.5 1.5 1.5 6.4 32.2 35 4 5 3 2 1 OUTLINE DRAWING PIN: Pin : RF INPUT VGG : GATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT GND: FIN H50 Dimensions in mm BLOCK DIAGRAM 1 2 3 4 5 Load VSWR tolerance -30 No degradation or destroy Symbol Parameter Test conditions Limits Min Max Unit f PO 2fO ρin Frequency range Output power 2nd. harmonic Input VSWR Stability VDD=7.2V, VGG=5V, Pin=1mW, ZG=ZL=50 Ω VDD=9V, Pin=1mW, PO=3.8W (VGG Adjust), ZL=20:1 ZG=ZL=50 Ω, VDD=5-9.3V, Load VSWR <4:1 806 870 No parasitic oscillation MHz W dBc 3.8 4 % ηT Total efficiency 30 PO=3.8W(VGG=Adjust), VDD=7.2V, Pin=1mW, ZG=ZL=50 Ω Note. Above parameters, ratings, limits and test conditions are subject to change. ELECTRICAL CHARACTERISTICS (Tc=25 °C, ZG=ZL=50Ω unless otherwise noted) ABSOLUTE MAXIMUM RATINGS (Tc=25 °C unless otherwise noted) Note. Above parameters are guaranteed independently. Symbol Parameter Conditions Ratings Unit V 9 VDD Supply voltage V 5.5 VGG Gate bias voltage mW 6 Pin Input power W 6 PO Output power °C -30 to +100 TC (OP) Operation case temperature °C -40 to +100 Tstg Storage temperature ZG=ZL=50 Ω f=806-870MHz, ZG=ZL=50 Ω f=806-870MHz, ZG=ZL=50 Ω f=806-870MHz, ZG=ZL=50 Ω |
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