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M68745H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M68745H
Description  SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M68745H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO
M68745H
MITSUBISHI RF POWER MODULE
Nov. ´97
4
5
3
2
1
OUTLINE DRAWING
PIN:
Pin
: RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO
: RF OUTPUT
GND: FIN
H50
Dimensions in mm
BLOCK DIAGRAM
1
2
3
4
5
Load VSWR tolerance
-30
No degradation or
destroy
Symbol
Parameter
Test conditions
Limits
Min
Max
Unit
f
PO
2fO
ρin
Frequency range
Output power
2nd. harmonic
Input VSWR
Stability
VDD=7.2V, VGG=5V, Pin=1mW,
ZG=ZL=50
VDD=9V, Pin=1mW,
PO=3.8W (VGG Adjust), ZL=20:1
ZG=ZL=50
Ω, VDD=5-9.3V,
Load VSWR <4:1
896
941
No parasitic oscillation
MHz
W
dBc
3.8
4
%
ηT
Total efficiency
30
PO=3.8W(VGG=Adjust), VDD=7.2V,
Pin=1mW, ZG=ZL=50
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS (Tc=25
°C, ZG=ZL=50Ω unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS (Tc=25
°C unless otherwise noted)
Note. Above parameters are guaranteed independently.
Symbol
Parameter
Conditions
Ratings
Unit
V
9
VDD
Supply voltage
V
5.5
VGG
Gate bias voltage
mW
6
Pin
Input power
W
6
PO
Output power
°C
-30 to +100
TC (OP)
Operation case temperature
°C
-40 to +100
Tstg
Storage temperature
ZG=ZL=50
f=896-941MHz, ZG=ZL=50
f=896-941MHz, ZG=ZL=50
f=896-941MHz, ZG=ZL=50
45
42
2-R1.5
5
(36.5)
18
5
8.5
1.5
1.5
6.4
32.2
35


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