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74LVT20 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. 74LVT20
Description  3.3V Dual 4-input NAND gate
Download  10 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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74LVT20 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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Philips Semiconductors
Product specification
74LVT20
3.3V Dual 4-input NAND gate
1996 Aug 28
3
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
DC supply voltage
–0.5 to +4.6
V
IIK
DC input diode current
VI < 0
–50
mA
VI
DC input voltage3
–0.5 to +7.0
V
IOK
DC output diode current
VO < 0
–50
mA
VOUT
DC output voltage3
Output in Off or High state
–0.5 to +7.0
V
IOUT
DC output current
Output in High state
–32
mA
IOUT
DC output current
Output in Low state
64
mA
Tstg
Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
SYMBOL
PARAMETER
MIN
MAX
UNIT
VCC
DC supply voltage
2.7
3.6
V
VI
Input voltage
0
5.5
V
VIH
High-level input voltage
2.0
V
VIL
Low-level Input voltage
0.8
V
IOH
High-level output current
–20
mA
IOL
Low-level output current
32
mA
IOL
Low-level output current; current duty cycle
≤ 50%, f ≥ 1kHz
48
mA
Tamb
Operating free-air temperature range
–40
+85
°C


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