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IXFK25N90 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. IXFK25N90
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFK25N90 Datasheet(HTML) 2 Page - IXYS Corporation

  IXFK25N90 Datasheet HTML 1Page - IXYS Corporation IXFK25N90 Datasheet HTML 2Page - IXYS Corporation IXFK25N90 Datasheet HTML 3Page - IXYS Corporation IXFK25N90 Datasheet HTML 4Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D = 0.5 • ID25
Note 1
18
28
S
C
iss
8.7
10.8
nF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
800
1000
pF
C
rss
300
375
pF
t
d(on)
60
ns
t
r
V
GS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
35
ns
t
d(off)
R
G = 1 W (External),
130
ns
t
f
24
ns
Q
g(on)
240
nC
Q
gs
V
GS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
56
nC
Q
gd
107
nC
R
thJC
0.22 K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS = 0 V
26N90
26
A
25N90
25
I
SM
Repetitive;
26N90
104
A
pulse width limited by T
JM
25N90
100
V
SD
I
F = IS, VGS = 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.4
mC
I
RM
10
A
I
F = IS, -di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse test, t
£ 300 ms, duty cycle d £ 2 %
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
PLUS247TM (IXFX) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA (IXFK) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025


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