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M374F3200DJ1-C Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. M374F3200DJ1-C
Description  32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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M374F3200DJ1-C Datasheet(HTML) 4 Page - Samsung semiconductor

 
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DRAM MODULE
M374F320(8)0DJ1-C
REV. 0.1 Oct. 2000
CAPACITANCE (TA = 25
°C, VCC=3.3V, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0-A12]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0 - RAS3]
Input capacitance[CAS0 - CAS7]
Input/Output capacitance[DQ0-DQ63, CB0-CB7]
CIN1
CIN2
CIN3
CIN4
CDQ
-
-
-
-
-
190
136
73
52
27
pF
pF
pF
pF
pF
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.)
Test condition : Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V, output loading CL=100pF
Parameter
Symbol
-50
-60
Unit
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
84
104
ns
Read-modify-write cycle time
tRWC
128
153
ns
Access time from RAS
tRAC
50
60
ns
3,4,9
Access time from CAS
tCAC
13
15
ns
3,4,5
Access time from column address
tAA
25
30
ns
3,9
CAS to output in Low-Z
tCLZ
3
3
ns
3
OE to output in Low-Z
tOLZ
3
3
ns
3
Output buffer turn-off delay from CAS
tCEZ
3
13
3
13
ns
6,10
Transition time(rise and fall)
tT
1
50
1
50
ns
2
RAS precharge time
tRP
30
40
ns
RAS pulse width
tRAS
50
10K
60
10K
ns
RAS hold time
tRSH
8
10
ns
CAS hold time
tCSH
38
40
ns
CAS pulse width
tCAS
8
10K
10
10K
ns
RAS to CAS delay time
tRCD
17
37
20
45
ns
4
RAS to column address delay time
tRAD
12
25
15
30
ns
9
CAS to RAS precharge time
tCRP
5
5
ns
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
7
10
ns
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
7
10
ns
Column address to RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to CAS
tRCH
0
0
ns
8
Read command hold referenced to RAS
tRRH
0
0
ns
8
Write command hold time
tWCH
7
10
ns
Write command pulse width
tWP
7
10
ns
Write command to RAS lead time
tRWL
8
10
ns
Write command to CAS lead time
tCWL
7
10
ns
Data set-up time
tDS
0
0
ns
Data hold time
tDH
7
10
ns
Refresh period (4K & 8K Ref.)
tREF
64
64
ms
Write command set-up time
tWCS
0
0
ns
7
CAS to W delay time
tCWD
33
38
ns
7
RAS to W delay time
tRWD
70
84
ns
7


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