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SMBJ3V3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SMBJ3V3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Vishay General Semiconductor SMBJ3V3 New Product Document Number 88940 08-Sep-06 www.vishay.com 1 Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Unidirectional polarity only • Peak pulse power: 600 W (10/1000 µs) • Excellent clamping capability • Very fast response time • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units specifically for protecting 3.3 V supplied sensitive equipment against transient overvoltages. MECHANICAL DATA Case: DO-214AA (SMBJ) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end DO-214AA (SMBJ) MAJOR RATINGS AND CHARACTERISTICS V(BR) 3.3 V PPPM 600 W IFSM 60 A Tj max. 175 °C Note: (1) Non-repetitive current pulse, per Fig. 1 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation (1,2) PPPM 600 W Peak pulse current with a 10/1000 μs waveform (see Fig. 1) IPPM 50 A Peak pulse current with a 8/20 waveform (see Fig. 1) IPPM 200 A Non repetitive peak forward surge current 8.3 ms single half sine-wave(2) IFSM 60 A Power dissipation on infinite heatsink, TL = 75 °C PM(AV) 5W Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE V(BR) AT IT MAXIMUM REVERSE LEAKAGE CURRENT IR AT VWM MAXIMUM CLAMPING VOLTAGE VC AT IPPM MAXIMUM CLAMPING VOLTAGE VC AT IPPM TYPICAL TEMP. COEFFICIENT OF V(BR) TYPICAL JUNCTION CAPACITANCE CJ AT 0 V, MIN MAX 10/1000 µs 8/20 µs 1 MHz V mA µA V VA VA (%/°C) pF SMBJ3V3 KC 4.1 1.0 200 3.3 7.3 50 10.3 200 - 5.3 5200 |
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Similar Description - SMBJ3V3 |
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