PDTA123EU datasheet(2/14 Pages) PHILIPS

Part #	PDTA123EU

Description	PNP resistor-equipped transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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2 / 14 page

2004 Aug 02

2

Philips Semiconductors

Product speciﬁcation

PNP resistor-equipped transistors;

R1 = 2.2 k

Ω, R2 = 2.2 kΩ

PDTA123E series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

PNP resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

VCEO

collector-emitter

voltage

−−50

V

IO

output current (DC)

−−100 mA

R1

bias resistor

2.2

−

k

Ω

R2

bias resistor

2.2

−

k

Ω

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE

NPN COMPLEMENT

PHILIPS

EIAJ

PDTA123EE

SOT416

SC-75

5C

PDTC123EE

PDTA123EEF

SOT490

SC-89

6C

PDTC123EEF

PDTA123EK

SOT346

SC-59

42

PDTC123EK

PDTA123EM

SOT883

SC-101

F7

PDTC123EM

PDTA123ES

SOT54 (TO-92)

SC-43

TA123E

PDTC123ES

PDTA123ET

SOT23

−

*21(1)

PDTC123ET

PDTA123EU

SOT323

SC-70

*42(1)

PDTC123EU

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PDTA123EU Datasheet(PDF) 2 Page - NXP Semiconductors

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