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4N25 Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. 4N25
Description  Optocoupler, Phototransistor Output, With Base Connection
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

4N25 Datasheet(HTML) 3 Page - Vishay Siliconix

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4N25/ 4N26/ 4N27/ 4N28
Document Number 83725
Rev. 1.4, 26-Jan-05
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
1) Indicates JEDEC registered values
Output
1) Indicates JEDEC registered values
Coupler
1) Indicates JEDEC registered values
Current Transfer Ratio
1) Indicates JEDEC registered value
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage1)
IF = 50 mA
VF
1.3
1.5
V
Reverse current1)
VR = 3.0 V
IR
0.1
100
µA
Capacitance
VR = 0 V
CO
25
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Collector-base breakdown
voltage1)
IC = 100 µABVCBO
70
V
Collector-emitter breakdown
voltage1)
IC = 1.0 mA
BVCEO
30
V
Emitter-collector breakdown
voltage1)
IE = 100 µABVECO
7.0
V
ICEO(dark)
1)
VCE = 10 V, (base open)
4N25
5.0
50
nA
4N26
5.0
50
nA
4N27
5.0
50
nA
4N28
10
100
nA
ICBO(dark)
1)
VCB = 10 V, (emitter open)
2.0
20
nA
Collector-emitter capacitance
VCE = 0
CCE
6.0
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Isolation voltage1)
Peak, 60 Hz
4N25
VIO
2500
V
4N26
VIO
1500
V
4N27
VIO
1500
V
4N28
VIO
500
V
Saturation voltage, collector-
emitter
ICE = 2.0 mA, IF = 50 mA
VCE(sat)
0.5
V
Resistance, input output1)
VIO = 500 V
RIO
100
G
Capacitance (input-output)
f = 1.0 MHz
CIO
0.5
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
DC Current Transfer Ratio1)
VCE = 10 V, IF = 10 mA
4N25
CTRDC
20
50
%
4N26
CTRDC
20
50
%
4N27
CTRDC
10
30
%
4N28
CTRDC
10
30
%


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