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RN4603 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. RN4603
Description  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN4603 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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RN4603
2001-06-05
3
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = −50V, IE = 0
−100
Collector cut-off current
ICEO
VCE = −50V, IB = 0
−500
nA
Emitter cut-off current
IEBO
VEB = −10V, IC = 0
−0.17
−0.33
mA
DC current gain
hFE
VCE = −5V, IC = −10mA
70
Collector-emitter saturation voltage
VCE (sat)
IC = −5mA, IB = −0.25mA
−0.1
−0.3
V
Input voltage (ON)
VI (ON)
VCE = −0.2V, IC = −5mA
−1.3
−3.0
V
Input voltage (OFF)
VI (OFF)
VCE = −5V, IC = −0.1mA
−1.0
−1.5
V
Transition frequency
fT
VCE = −10V, IC = −5mA
200
MHz
Collector output capacitance
Cob
VCB = −10V, IE = 0, f = 1MHz
3
6
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50V, IE = 0
100
Collector cut-off current
ICEO
VCE = 50V, IB = 0
500
nA
Emitter cut-off current
IEBO
VEB = 10V, IC = 0
0.17
0.33
mA
DC current gain
hFE
VCE = 5V, IC = 10mA
70
Collector-emitter saturation voltage
VCE (sat)
IC = 5mA, IB = 0.25mA
0.1
0.3
V
Input voltage (ON)
VI (ON)
VCE = 0.2V, IC = 5mA
1.3
3.0
V
Input voltage (OFF)
VI (OFF)
VCE = 5V, IC = 0.1mA
1.0
1.5
V
Transition frequency
fT
VCE = 10V, IC = 5mA
250
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1 MHz
3
6
pF
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
15.4
22
28.6
kΩ
Resistor ratio
R1/R2
0.9
1.0
1.1


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