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IRGPS40B120UDP Datasheet(PDF) 1 Page - International Rectifier

Part No. IRGPS40B120UDP
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRGPS40B120UDP Datasheet(HTML) 1 Page - International Rectifier

 
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IRGPS40B120UDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
VCES = 1200V
VCE(on) typ. = 3.12V
@ VGE = 15V,
ICE = 40A, Tj=25°C
11/19/04
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
V
IC @ TC = 25°C
Continuous Collector Current
80
IC @ TC = 100°C
Continuous Collector Current
40
ICM
Pulsed Collector Current
160
A
ILM
Clamped Inductive Load Current

160
IF @ TC = 25°C
Diode Continuous Forward Current
80
IF @ TC = 100°C
Diode Continuous Forward Current
40
IFM
Diode Maximum Forward Current
160
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
595
PD @ TC = 100°C
Maximum Power Dissipation
238
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
• Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
Benefits
W
www.irf.com
1
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
E
G
C
N-channel
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
–––
–––
0.20
RθJC
Junction-to-Case - Diode
–––
–––
0.83
°C/W
RθCS
Case-to-Sink, flat, greased surface
–––
0.24
–––
RθJA
Junction-to-Ambient, typical socket mount
–––
–––
40
Recommended Clip Force
20 (2)
–––
–––
N(kgf)
Wt
Weight
–––
6.0 (0.21)
–––
g (oz)
Le
Internal Emitter Inductance (5mm from package)
–––
13
–––
nH
Thermal Resistance
Super-247™
UltraFast Co-Pack IGBT
PD- 95967


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