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SI4913DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4913DY
Description  Dual P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4913DY Datasheet(HTML) 2 Page - Vishay Siliconix

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Vishay Siliconix
SPICE Device Model Si4913DY
www.vishay.com
Document Number: 70107
S-52287
Rev. B, 31-Oct-05
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = − 500 µA
0.75
V
On-State Drain Current
a
ID(on)
VDS = −5 V, VGS = −4.5 V
235
A
VGS = −4.5 V, ID = −9.4 A
0.0124
0.0125
VGS = −2.5 V, ID = −8.4 A
0.015
0.0155
Drain-Source On-State Resistance
a
rDS(on)
VGS = −1.8 V, ID = −5 A
0.019
0.020
Forward Transconductance
a
gfs
VDS = −10 V, ID = −9.4 A
42
40
S
Diode Forward Voltage
a
VSD
IS = −1.7 A, VGS = 0 V
−0.80
−0.70
V
Dynamic
b
Total Gate Charge
Qg
47
43
Gate-Source Charge
Qgs
7.1
7.1
Gate-Drain Charge
Qgd
VDS = −6 V, VGS = −4.5 V, ID = −9.4 A
10.9
10.9
nC
Turn-On Delay Time
td(on)
36
32
Rise Time
tr
35
42
Turn-Off Delay Time
td(off)
166
350
Fall Time
tf
VDD = −6 V, RL = 6 Ω
ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω
43
160
Source-Drain Reverse Recovery Time
trr
IF = −1.7 A, di/dt = 100 A/µs
135
127
ns
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.


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