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SI4913DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4913DY Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 Vishay Siliconix SPICE Device Model Si4913DY www.vishay.com Document Number: 70107 S-52287 Rev. B, 31-Oct-05 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = − 500 µA 0.75 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −4.5 V 235 A VGS = −4.5 V, ID = −9.4 A 0.0124 0.0125 VGS = −2.5 V, ID = −8.4 A 0.015 0.0155 Drain-Source On-State Resistance a rDS(on) VGS = −1.8 V, ID = −5 A 0.019 0.020 Ω Forward Transconductance a gfs VDS = −10 V, ID = −9.4 A 42 40 S Diode Forward Voltage a VSD IS = −1.7 A, VGS = 0 V −0.80 −0.70 V Dynamic b Total Gate Charge Qg 47 43 Gate-Source Charge Qgs 7.1 7.1 Gate-Drain Charge Qgd VDS = −6 V, VGS = −4.5 V, ID = −9.4 A 10.9 10.9 nC Turn-On Delay Time td(on) 36 32 Rise Time tr 35 42 Turn-Off Delay Time td(off) 166 350 Fall Time tf VDD = −6 V, RL = 6 Ω ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω 43 160 Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/µs 135 127 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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