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OT410D Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. OT410D
Description  NPN Silicon Phototransistor
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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OT410D Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

  OT410D Datasheet HTML 1Page - List of Unclassifed Manufacturers  
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Rhopoint Components Ltd
Tel: +44 (0) 870 608 1188
Fax: +44 (0) 870 241 2255
Germany: +49 (0) 692 199 8606
Fax: +49 (0) 692 199 8595
Email: sales@rhopointcomponents.com
Website: www.rhopointcomponents.com
NPN Silicon Phototransistor
Type OT 410D and OT 410T
The OT410 sensors consist
of a high gain NPN silicon
photo transistor mounted in
hermetically sealed TO-46
package. These sensors are
ideally suited for hostile
environment operation. The
OT410D features a domed
lens and the OT410T a flat
window.
TO - 46 Package
Hermetically Sealed Device ideal for hostile
environments
High Sensitivity
Dimensions in mm
Specifications:
Operating Temperature Range
-55°C to 125°C
PARAMETERS
SYMBOL MIN.
TYP MAX.
UNITS
Light Current
OT 410D(T)-1
3 (1.5)
mA
H = 1mW/cm2
OT 410D(T)-2 IC(ON)
5 (2)
15 (6)
mA
OT 410D(T)-3
12 (4)
mA
Dark Current VCE = 10V, H = 0
ICED
40
nA
Collector Emitter Voltage
VCED
35
V
Emitter Collector Voltage
VECD
6
V
Saturation Voltage IC = 1mA
VCE(SAT)
0.50
V
Angular Response
OT 410D
20
Deg.
OT 410T
Φ
80
Deg.
Rise or Fall Time
OT 410D-1
6
µS
RL = 100Ω VCC = 10V OT 410D-6
tr, tf
8
µS


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