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74LVC16373A Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. 74LVC16373A
Description  16-bit D-type transparent latch with 5 Volt tolerant inputs/outputs 3-State
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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74LVC16373A Datasheet(HTML) 5 Page - NXP Semiconductors

 
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Philips Semiconductors
Product specification
74LVC16373A/
74LVCH16373A
16-bit D-type transparent latch with 5 Volt tolerant
inputs/outputs (3-State)
1998 Mar 17
5
ABSOLUTE MAXIMUM RATINGS1
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
DC supply voltage
–0.5 to +6.5
V
IIK
DC input diode current
VI t 0
–50
mA
VI
DC input voltage
Note 2
–0.5 to +6.5
V
IOK
DC output diode current
VO uVCC or VO t 0
"50
mA
VO
DC output voltage; output HIGH or LOW state
Note 2
–0.5 to VCC +0.5
V
VO
DC output voltage; output 3-State
Note 2
–0.5 to 6.5
V
IO
DC output source or sink current
VO = 0 to VCC
"50
mA
IGND, ICC
DC VCC or GND current
"100
mA
Tstg
Storage temperature range
–65 to +150
°C
Power dissipation per package
PTOT
– plastic mini-pack (SO)
above +70
°C derate linearly with 8 mW/K
500
mW
– plastic shrink mini-pack (SSOP and TSSOP)
above +60
°C derate linearly with 5.5 mW/K
500
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
°C to +85°C
UNIT
MIN
TYP1
MAX
VIH
HIGH level Input voltage
VCC = 1.2V
VCC
V
VIH
HIGH level In ut voltage
VCC = 2.7 to 3.6V
2.0
V
VIL
LOW level Input voltage
VCC = 1.2V
GND
V
VIL
LOW level In ut voltage
VCC = 2.7 to 3.6V
0.8
V
VCC = 2.7V; VI = VIH or VIL; IO = –12mA
VCC*0.5
V
V
=3 0V; V =V
or V ; I = 100
µA
V
02
V
VO
HIGH level output voltage
VCC = 3.0V; VI = VIH or VIL; IO = –100µA
VCC*0.2
VCC
VOH
HIGH level output voltage
VCC = 3.0V; VI = VIH or VIL; IO = –18mA
VCC*0.6
V
VCC = 3.0V; VI = VIH or VIL; IO = –24mA
VCC*0.8
VCC = 2.7V; VI = VIH or VIL;IO = 12mA
0.40
VOL
LOW level output voltage
VCC = 3.0V; VI = VIH or VIL;IO = 100µA
0.20
V
VCC = 3.0V; VI = VIH or VIL; IO = 24mA
0.55
II
Input leakage current
VCC = 3.6V; VI = 5.5V or GND6
"0.1
"5
µA
IOZ
3-State output OFF-state current
VCC = 3.6V; VI = VIH or VIL;VO = 5.5V or GND
0.1
"5
µA
Ioff
Power off leakage supply
VCC = 0.0V; VI or VO = 5.5V
"10
µA
ICC
Quiescent supply current
VCC = 3.6V; VI = VCC or GND; IO = 0
0.1
20
µA
∆ICC
Additional quiescent supply
current per input pin
VCC = 2.7V to 3.6V; VI = VCC –0.6V; IO = 0
5
500
µA


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