NTP45N06L datasheet(3/8 Pages) ONSEMI

Part #	NTP45N06L

Description	45 Amps, 60 Volts, Logic Level, N?묬hannel TO??20 and D2PAK

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Manufacturer	ONSEMI [ON Semiconductor]

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NTP45N06L, NTB45N06L

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

−

67

67.2

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

1.0

10

mAdc

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage (Note 4)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.8

4.7

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance (Note 4)

(VGS = 5.0 Vdc, ID = 22.5 Adc)

RDS(on)

−

23

28

m

W

Static Drain−to−Source On−Voltage (Note 4)

(VGS = 5.0 Vdc, ID = 45 Adc)

(VGS = 5.0 Vdc, ID = 22.5 Adc, TJ = 150°C)

VDS(on)

−

1.03

0.93

1.51

−

Vdc

Forward Transconductance (Note 4) (VDS = 8.0 Vdc, ID = 12 Adc)

gFS

−

22.8

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0Vd

Ciss

−

1212

1700

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

352

480

Transfer Capacitance

f = 1.0 MHz)

Crss

−

90

180

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(on)

−

13

30

ns

Rise Time

(VDD = 30 Vdc, ID = 45 Adc,

tr

−

341

680

Turn−Off Delay Time

(VDD 30 Vdc, ID

45 Adc,

VGS = 5.0 Vdc, RG = 9.1 W) (Note 4)

td(off)

−

36

75

Fall Time

tf

−

158

320

Gate Charge

(V

48 Vd

I

45 Ad

QT

−

23

32

nC

(VDS = 48 Vdc, ID = 45 Adc,

VGS = 5.0 Vdc) (Note 4)

Q1

−

4.6

−

VGS = 5.0 Vdc) (Note 4)

Q2

−

14.1

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 45 Adc, VGS = 0 Vdc) (Note 4)

(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

1.01

0.92

1.15

−

Vdc

Reverse Recovery Time

(I

45 Ad

V

0Vd

trr

−

56

−

ns

(IS = 45 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 4)

ta

−

30

−

dIS/dt = 100 A/ms) (Note 4)

tb

−

26

−

Reverse Recovery Stored Charge

QRR

−

0.09

−

mC

3. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).

4. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperatures.

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