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M5M51008BFP Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor |
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M5M51008BFP Datasheet(HTML) 7 Page - Mitsubishi Electric Semiconductor |
7 / 7 page ![]() MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1997-1/21 MITSUBISHI ELECTRIC VCC = 3V 1) S2 ≤ 0.2V, other inputs = 0~3V 2) S1 ≥ VCC - 0.2V,S2 ≥ VCC - 0.2V other inputs = 0~3V (Ta = 0~70°C, unless otherwise noted) 0.2V t rec (PD) 3.0V* S2 ≤ 0.2V 7 (3) POWER DOWN CHARACTERISTICS S1 control mode S2 control mode POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Power down set up time Power down recovery time (2) TIMING REQUIREMENTS (Ta = 0~70°C, unless otherwise noted ) tsu (PD) trec (PD) Symbol Parameter ns Max Typ Limits Min Test conditions Unit 0 5 ms 3.0V* t su (PD) 0.2V 2.2V t su (PD) 3.0V* 3.0V* 2.2V t rec (PD) S1 ≥ VCC - 0.2V VCC S1 VCC S2 Symbol Parameter V V Max Typ Limits Min Test conditions Unit µA V 2 50 0.2 -LL -L (Note 7) 0.3 10 VCC (PD) VI (S1) VI (S2) ICC (PD) Power down supply voltage Chip select input S1 Chip select input S2 Power down supply current Note7: ICC (PD) = 1µA in case of Ta = 25°C 2.0 *Note 2.7V(-12VL,-12VLL,-15VL,-15VLL) |
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