M5M4V16169DRT-7 datasheet(26/64 Pages) MITSUBISHI

Part #	M5M4V16169DRT-7

Description	16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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M5M4V16169DTP/RT-7,-8,-10,-15

16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

MITSUBISHI LSIs

(REV 1.0) Jul. 1998

MITSUBISHI ELECTRIC

AVERAGE SUPPLY CURRENT from Vcc

Symbol

Condition

Limits (MAX)

output open

IccS

Average supply current of SRAM operating, tK=min.

DRAM=DPD

IccD

Average supply current of DRAM operating, tRC=min.

SRAM=SPD

Icc(STN1)

LVTTL standby, tK=min, DRAM=DNOP&SRAM=DES,

or NOP all input=stable.

Icc(STN2)

CMOS standby, tK=min, DRAM=DNOP&SRAM+DES,

or NOP all input=stable.

Icc(PD)

CMOS Power Down current, CMd#=CMs#=L,tK=min.

* VOH(AC) and VOL(AC) are the reference levels for AC measurements.

VOH(DC) and VOL(DC) are the final levels the outputs reach.

AC OPERATING CONDITIONS AND CHARACTERISTICS

Symbol

Parameter

Test Condition

Limits

Unit

Min.

Max

V

IOZ

Off-state Output Current

Q floating V O =0 ~VddQ

-10

10

uA

II

Input Current

VIH=0 ~ VddQ+0.3V

-10

10

uA

-8

-10

5

Icc(SRF)

CMOS Self Refresh current, CMd#=CMs#=L,tK=

1

5

IccD(PG)

Average supply current of DRAM page-mode tPC=min.

SRAM=SPD

output open

data input=H or L

-7

5

1

VTT

50ohm

30pF

VOUT

AC Condition

(Access Time)

260

240

200

160

150

130

140

130

110

60

50

40

26

VOH(DC)*(LVTTL)

VOL(DC)*(LVTTL)

High-level Output Voltage (DC)

Low-level Output Voltage (DC)

IOH= -2mA

IOL= 2mA

2.4

0.4

-

**-15 spec is the same as M5M4V16169TP/RT-15

Unit

mA

-15

1

5

140

100

80

30

25

(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7

Vss=0V, unless otherwise noted)

(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7

Vss=0V, unless otherwise noted)

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M5M4V16169DRT-7 Datasheet(PDF) 26 Page - Mitsubishi Electric Semiconductor

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