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STB10NK60Z Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STB10NK60Z
Description  N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB10NK60Z Datasheet(HTML) 4 Page - STMicroelectronics

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2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4/19
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/Off
Table 6.
Dynamic
Table 7.
Switching on/off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 250µA, VGS= 0
600
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
1
50
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±15V, VDS = 0
±
10
µA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID = 250 µA
33.75
4.5
V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10 V, ID= 20 A
0.65
0.75
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs Note 4
Forward Transconductance
VDS =15V, ID = 4.5A
7.8
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS =25V, f=1 MHz, VGS=0
1370
156
37
pF
pF
pF
Coss eq.
Note 5
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V
90
pF
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 8A
VGS =10V
(see Figure 19)
50
10
25
70
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
20
20
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
55
30
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD=480 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
18
18
36
ns
ns
ns


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