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M68731N Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M68731N
Description  SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M68731N Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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SILICON MOS FET POWER AMPLIFIER, 142-163MHz, 7W, FM PORTABLE RADIO
M68731N
MITSUBISHI RF POWER MODULE
Nov. ´97
1
OUTLINE DRAWING
PIN:
Pin
: RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO
: RF OUTPUT
GND: FIN
Dimensions in mm
BLOCK DIAGRAM
1
2
3
4
5
4
5
3
2
Symbol
Parameter
Test conditions
Limits
Min
Max
Unit
f
PO
ηT
2fO
ρin
-
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Load VSWR tolerance
VDD=7.2V,
VGG=3.5V,
Pin=50W
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
142
163
7
45
-20
No degradation or
destroy
MHz
W
%
dBc
-
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS (Tc=25
°C, ZG=ZL=50Ω unless otherwise noted)
Symbol
Parameter
Conditions
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25
°C unless otherwise noted)
Note. Above parameters are guarateed independently.
V
9.2
VDD
Supply voltage
V
4
VGG
Gate bias voltage
mW
70
Pin
Input power
W
10
PO
Output power
°C
-30 to +100
TC (OP)
Operation case temperature
°C
-40 to +110
Tstg
Strage temperature
VGG
≤3.5V, ZG=ZL=50Ω
f=142-163MHz, ZG=ZL=50
f=142-163MHz, ZG=ZL=50
f=142-163MHz, ZG=ZL=50
Stability
4
13.7±1
18.8±1
23.9±1
30±0.2
26.6±0.2
2-R1.5±0.1
1
2
3
4
5
0.45
21.2±0.2
6±1
ZG=50
Ω, VDD=4-9.2V,
Load VSWR
<4:1
-
-
No parasitic oscillation


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