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M68731L Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M68731L Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO M68731L MITSUBISHI RF POWER MODULE Nov. ´97 13.7±1 18.8±1 6±1 23.9±1 1 OUTLINE DRAWING PIN: Pin : RF INPUT VGG : GATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT GND: FIN Dimensions in mm BLOCK DIAGRAM 1 2 3 4 5 4 5 3 2 Symbol Parameter Test conditions Limits Min Max Unit f PO ηT 2fO ρin - Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Load VSWR tolerance VDD=7.2V, VGG=3.5V, Pin=50mW VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1 135 155 7 50 -20 No degradation or destroy MHz W % dBc - - Note. Above parameters, ratings, limits and test conditions are subject to change. ELECTRICAL CHARACTERISTICS (Tc=25 °C,ZG=ZL=50Ω unless otherwise noted) Symbol Parameter Conditions Ratings Unit ABSOLUTE MAXIMUM RATINGS (Tc=25 °C unless otherwise noted) Note. Above parameters are guaranteed independently. V 9.2 VDD Supply voltage V 4 VGG Gate bias voltage mW 70 Pin Input power W 10 PO Output power °C -30 to +100 TC (OP) Operation case temperature °C -40 to +110 Tstg Storage temperature VGG ≤3.5V, ZG=ZL=50Ω f=135-155MHz, ZG=ZL=50 Ω f=135-155MHz, ZG=ZL=50 Ω f=135-155MHz, ZG=ZL=50 Ω Stability 4 30±0.2 26.6±0.2 2-R1.5±0.1 1 2 3 4 5 0.45 21.2±0.2 ZG=50 Ω, VDD=4-9.2V, Load VSWR <4:1 - - No parasitic oscillation |
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