RDX060N60

Transistors

2/2

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

−

Typ.

Max.

Unit

Conditions

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

∗Pulsed

−

±10

µA

600

−−

V

−−

25

µA

2.0

−

4.0

V

−

0.9

1.2

Ω

2.5

4.3

−

S

−

950

−

pF

−

110

20

−

pF

−

20

−

pF

−

14

−

ns

−

40

−

ns

−

28

−

ns

−

25

−

ns

−

6.5

−

nC

−

12

−

nC

−−

nC

300V

f=1MHz

150

V

Ω

Ω

Body diode characteristics (Source-drain) (Ta=25

°C)

−−

1.5

V

Forward voltage

−

500

−

ns

di/dt= 100A /

µs

Reverse recovery time

−

4.6

−µC

Reverse recovery charge

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗

∗

∗

∗ Pulsed