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CDNBS08-SLVU2.8-8 Datasheet(PDF) 1 Page - Bourns Electronic Solutions |
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CDNBS08-SLVU2.8-8 Datasheet(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page CDNBS08-SLVU2.8-8 – Low Capacitance TVS Array Features ■ Lead free device (RoHS compliant*) ■ Protects up to 4 I/O ports ■ Bidirectional configuration ■ ESD protection ■ Low capacitance 6 pF Applications ■ Ethernet – 10/100/1000 Base T ■ Personal digital assistant ■ Handheld electronics ■ Cellular phones ■ Video cards General Information Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Array combination diodes for surge and ESD protection applications in an 8 Lead Narrow Body SOIC package size format. Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. Parameter Symbol Min. Nom. Max. Unit Peak Pulse Current (tp = 8/20 µs) IPP 30 A Peak Pulse Power (tp = 8/20 µs)1 PPP 600 W Working Voltage VWM 2.8 V Breakdown Voltage @ 1 mA VBR 3.0 V Leakage Current @ VWM ID 1.0 µA Capacitance @ 0 V, 1 MHz C 6 pF Snapback Voltage 2.8 V Clamping Voltage @ IPP = 2 A VC 5.5 V @ IPP = 5 A VC 8.5 V @ IPP = 24 A VC 15 V @ IPP = 30 A VC 17 V Parameter Symbol Min. Nom. Max. Unit Operating Temperature TJ -55 +25 +150 °C Storage Temperature TSTG -55 +25 +150 °C Note: 1. See Peak Pulse Power vs. Pulse Time. 8765 1234 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. |
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