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CD0402-T3.3C Datasheet(PDF) 1 Page - Bourns Electronic Solutions

Part No. CD0402-T3.3C
Description  CD0402-TxxC - TVS Diode Array Series
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Maker  BOURNS [Bourns Electronic Solutions]
Homepage  http://www.bourns.com
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CD0402-T3.3C Datasheet(HTML) 1 Page - Bourns Electronic Solutions

   
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*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD0402-TxxC – TVS Diode Array Series
Features
Lead free as standard
RoHS compliant*
Protects 1 line
Bidirectional configuration
ESD protection
Applications
Cell phones
PDAs and notebooks
Digital cameras
MP3 players and GPS
General Information
Electrical & Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in 0402 chip package size format. The Transient Voltage
Supressor Array series offers a choice of voltage types ranging from 3 V to 36 V in a
bidirectional configuration. Bourns® Chip Diodes conform to JEDEC standards, are
easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
Notes:
1. See Peak Pulse Power vs. Pulse Time.
2. See Pulse Wave Form.
3. Max. Leakage Current <500 µA @ 2.8 V.
4. Max. Leakage Current <500 nA @ 3.3 V.
5. Max. Leakage Current <200 nA @ 5 V.
All devices are bidirectional. Electrical Characteristics apply in both directions.
Parameter
Symbol
Value
Unit
Peak Pulse Power (tp = 8/20 µs)
1
PPP
250
W
Operating Temperature
TJ
-55 ˚C to 150 ˚C
˚C
Storage Temperature
TSTG
-55 ˚C to 150 ˚C
˚C
CD0402-
Parameter
Symbol
T3.3C
T05C
T08C
T12C
T15C
T24C
T36C
Unit
Min. Breakdown Voltage @ 1 mA
VBR
4.0
6.0
8.5
13.3
16.7
26.7
40.0
V
Working Peak Voltage
VWM
3.3
5.0
8.0
12.0
15.0
24.0
36.0
V
Maximum Clamping Voltage @ IP2
VF
7.0
11.0
13.4
19.0
24
43
64
V
Maximum Clamping Voltage
VF
12.5 V
14.7 V
19.2 V
29.7 V
35.7 V
55 V
84 V
V
@ 8/20 µs VC @ IPP2
@ 20 A
@ 17 A
@ 13 A
@ 9 A
@ 7 A
@ 5 A
@ 3 A
Maximum Leakage Current @ VWM
ID
75
3
10
4
10
5
11
1
1
µA
Typical Capacitance @ 0 V, 1 MHz
C
150
100
75
50
40
30
25
pF


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