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SFH601-2X007 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SFH601-2X007 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page VISHAY SFH601 Document Number 83663 Rev. 1.4, 26-Oct-04 Vishay Semiconductors www.vishay.com 3 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Current Transfer Ratio and Collector-Emitter Leakage Current by Dash Number Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 60 mA VF 1.25 1.65 V Breakdown voltage IR = 10 µAVBR 6.0 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VF = 0 V, f = 1.0 MHz CO 25 pF Thermal resistance Rthja 750 K/W Parameter Test condition Part Symbol Min Typ. Max Unit Collector-emitter capacitance f = 1.0 MHz, VCE = 5.0 V CCE 6.8 pF Collector - base capacitance f = 1.0 MHz, VCB = 5.0 V CCB 8.5 pF Emitter - base capacitance f = 1.0 MHz, VEB = 5.0 V CEB 11 pF Thermal resistance RTHJamb 500 K/W Collector-emitter leakage current VCE = 10 V SFH601-1 ICEO 2.0 50 nA SFH601-2 ICEO 2.0 50 nA SFH601-3 ICEO 5.0 100 nA SFH601-4 ICEO 5.0 100 nA Parameter Test condition Symbol Min Typ. Max Unit Saturation voltage, collector- emitter IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V Capacitance (input-output) VI-O = 0 , f = 1.0 MHz CIO 0.6 pF Parameter Test condition Part Symbol Min Typ. Max Unit IC/IF at VCE = 5.0 V IF = 10 mA SFH601-1 CTR 40 80 % SFH601-2 CTR 63 125 % SFH601-3 CTR 100 200 % SFH601-4 CTR 160 320 % IF = 1.0 mA SFH601-1 CTR 13 30 % SFH601-2 CTR 22 45 % SFH601-3 CTR 34 70 % SFH601-4 CTR 56 90 % |
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