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SFH601 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH601 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  www.vishay.com 2 Document Number 83663 Rev. 1.4, 26-Oct-04 VISHAY SFH601 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler 1) between emitter and detector referred to climate DIN 40046, part 2, Nov. 74 2) index per DIN IEC 60112/VDE0303, part 1 Parameter Test condition Symbol Value Unit Reverse voltage VR 6.0 V DC forward current IF 60 mA Surge forward current t =10 µsI FSM 2.5 A Total power dissipation Pdiss 100 mW Parameter Test condition Symbol Value Unit Collector-emitter voltage VCE 100 V Emitter-base voltage VEBO 7.0 V Collector current IC 50 mA t = 1.0 ms IC 100 mA Power dissipation Pdiss 150 mW Parameter Test condition Symbol Value Unit Isolation test voltage 1) t = 1.0 s VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking 2) 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Junction temperature Tj 100 °C Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C |
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