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LM4562 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM4562
Description  Dual High Performance, High Fidelity Audio Operational Amplifier
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LM4562 Datasheet(HTML) 3 Page - National Semiconductor (TI)

 
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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
(V
S =V
+ -V-)
36V
Storage Temperature
−65˚C to 150˚C
Input Voltage
(V-) - 0.7V to (V+) + 0.7V
Output Short Circuit (Note 3)
Continuous
Power Dissipation
Internally Limited
ESD Susceptibility (Note 4)
2000V
ESD Susceptibility (Note 5)
Pins 1, 4, 7 and 8
200V
Pins 2, 3, 5 and 6
100V
Junction Temperature
150˚C
Thermal Resistance
θ
JA (SO)
145˚C/W
θ
JA (NA)
102˚C/W
θ
JA (HA)
150˚C/W
θ
JC (HA)
35˚C/W
Temperature Range
T
MIN
≤ T
A
≤ T
MAX
–40˚C
≤ T
A
≤ 85˚C
Supply Voltage Range
±2.5V
≤ V
S
± 17V
Electrical Characteristics for the LM4562 (Note 1)
The following specifications apply for the circuit shown in Figure X. V
S = ±15V, RL =2k
Ω,R
SOURCE =10
Ω,f
IN = 1kHz, and
T
A = 25˚C, unless otherwise specified.
Symbol
Parameter
Conditions
LM4562
Units
(Limits)
Typical
Limit
(Note 6)
(Note 7)
THD+N
Total Harmonic Distortion + Noise
A
V =1,VOUT =3Vrms
R
L =2k
R
L = 600
0.00003
0.00003
0.00009
% (max)
IMD
Intermodulation Distortion
A
V =1,VOUT =3VRMS
Two-tone, 60kHz & 7kHz 4:1
0.00005
dB
GBWP
Gain Bandwidth Product
55
45
MHz (min)
SR
Slew Rate
±20
±15
V/µs (min)
FPBW
Full Power Bandwidth
V
OUT =1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
10
MHz
t
s
Settling time
A
V = –1, 10V step, CL = 100pF
0.1% error range
1.2
µs
e
n
Equivalent Input Noise Voltage
f
BW = 20Hz to 20kHz
0.34
0.65
µV
RMS
(max)
Equivalent Input Noise Density
f = 1kHz
f = 10Hz
2.7
6.4
4.7
nV/
Hz
(max)
i
n
Current Noise Density
f = 1kHz
f = 10Hz
1.6
3.1
pA/
Hz
V
OS
Offset Voltage
±0.1
±0.7
mV (max)
∆V
OS/
∆Temp
Average Input Offset Voltage Drift
vs Temperature
–40˚C
≤ T
A
≤ 85˚C
0.2
µV/˚C
PSRR
Average Input Offset Voltage Shift
vs Power Supply Voltage
∆V
S = 20V (Note 8)
120
110
dB (min)
ISO
CH-CH
Channel-to-Channel Isolation
f
IN = 1kHz
f
IN = 20kHz
118
112
dB
I
B
Input Bias Current
V
CM = 0V
10
72
nA (max)
∆I
OS/
∆Temp
Input Bias Current Drift vs
Temperature
–40˚C
≤ T
A
≤ 85˚C
0.1
nA/˚C
I
OS
Input Offset Current
V
CM = 0V
11
65
nA (max)
V
IN-CM
Common-Mode Input Voltage
Range
+14.1
–13.9
(V+) – 2.0
(V-) + 2.0
V (min)
CMRR
Common-Mode Rejection
–10V<Vcm<10V
120
110
dB (min)
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