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IXFV74N20PS Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFV74N20PS Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS reserves the right to change limits, test conditions, and dimensions. IXFH 74N20P IXFV 74N20P IXFV 74N20PS Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. g fs V DS= 10 V; ID = 0.5 ID25, pulse test 30 44 S C iss 3300 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 800 pF C rss 190 pF t d(on) 23 ns t r V GS = 10 V, VDS = 0.5 VDSS, ID = ID25 21 ns t d(off) R G = 4 Ω (External) 60 ns t f 21 ns Q g(on) 107 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 nC Q gd 52 nC R thJC 0.31 K/W R thCK (TO-247, PLUS220) 0.21 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions Min. typ. Max. I S V GS = 0 V 74 A I SM Repetitive 180 A V SD I F = IS, VGS = 0 V, 1.5 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr I F = 25 A, -di/dt = 100 A/µs 120 200 ns Q RM V R = 100 V 0.4 µC I RM 6A IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 TO-247 (IXFH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Terminals: 1 - Gate 2 - Drain 1 2 3 D1 L L3 L1 E1 e E b D c A2 A1 A L2 Terminals: 1-Gate 2-Drain E1 E L2 D L3 L L1 3X b 2X e c A2 A1 A E1 D1 PLUS220 (IXFV) Outline L L3 L2 L1 A1 E1 e D1 E b D c A2 A A3 L4 Terminals: 1-Gate 2-Drain E E1 D L2 A A1 L1 L L3 e 2X b c A2 L4 A3 E1 PLUS220SMD (IXFV-PS) Outline |
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