IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 74N20P IXFV 74N20P

IXFV 74N20PS

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

30

44

S

C

iss

3300

pF

C

oss

V

800

pF

C

rss

190

pF

t

d(on)

23

ns

t

r

V

21

ns

t

d(off)

R

60

ns

t

f

21

ns

Q

g(on)

107

nC

Q

gs

V

24

nC

Q

gd

52

nC

R

thJC

0.31 K/W

R

thCK

(TO-247, PLUS220)

0.21

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

typ.

Max.

I

S

V

74

A

I

SM

Repetitive

180

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

120

200 ns

Q

RM

V

0.4

µC

I

RM

6A

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

TO-247 (IXFH) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Terminals: 1 - Gate

2 - Drain

1

2

3

D1

L

L3

L1

E1

e

E

b

D

c

A2

A1

A

L2

Terminals: 1-Gate 2-Drain

E1

E

L2

D

L3

L

L1

3X b

2X e

c

A2

A1

A

E1

D1

PLUS220 (IXFV) Outline

L

L3

L2

L1

A1

E1

e

D1

E

b

D

c

A2

A

A3

L4

Terminals: 1-Gate 2-Drain

E

E1

D

L2

A

A1

L1

L

L3

e

2X b

c

A2

L4

A3

E1

PLUS220SMD (IXFV-PS) Outline