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HZN6.8ZMFA Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HZN6.8ZMFA
Description  Silicon Planar Zener Diode for Surge Absorb
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HZN6.8ZMFA Datasheet(HTML) 2 Page - Renesas Technology Corp

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HZN6.8ZMFA
Rev.1.00, May.08.2003, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd *
1
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Four device total, See Fig.2.
Electrical Characteristics *
1
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
V
Z
6.47
7.00
V
I
Z = 5 mA, 40 ms pulse
Reverse current
I
R
——0.5
µAV
R = 3.5 V
Capacitance
C
25
pF
V
R = 0 V, f = 1 MHz
Dynamic resistance
r
d
——30
I
Z = 5 mA
ESD-Capability *
2 *3
25
kV
C = 150 pF, R = 330
Ω, Both forward
and reverse direction 10 pulse
Notes: 1. Per one device.
2. Failure criterion ; I
R > 0.5 µA at VR = 3.5 V.
3. Between cathode and anode.
Month Code
Month of Manufacture
Month Code
Month of Manufacture
Month Code
January
A
July
G
February
B
August
H
March
C
September
J
April
D
October
K
May
E
November
L
June
F
December
M


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