CY7C1214F
Document #: 38-05434 Rev. *A
Page 7 of 15
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°C to +150°C
Ambient Temperature with
Power Applied.............................................–55
°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
DC Voltage Applied to Outputs
in Three-State ..................................... –0.5V to VDDQ + 0.5V
DC Input Voltage....................................–0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature]
VDD
VDDQ
Commercial
0
°C to +70°C
3.3V
−5%/+10%
3.3V –5%
to VDD
Electrical Characteristics Over the Operating Range [7, 8]
Parameter
Description
Test Conditions
CY7C1214F
Unit
Min.
Max.
VDD
Power Supply Voltage
3.135
3.6
V
VDDQ
I/O Supply Voltage
3.135
3.6
V
VOH
Output HIGH Voltage
VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
VDDQ = 3.3V
2.0
VDD + 0.3V V
VIL
Input LOW Voltage[7]
VDDQ = 3.3V
–0.3
0.8
V
IX
Input Load Current
(except ZZ and MODE)
GND
≤ VI ≤ VDDQ
−55
µA
Input Current of MODE
Input = VSS
–30
µA
Input = VDD
5
µA
Input Current of ZZ
Input = VSS
–5
µA
Input = VDD
30
µA
IOZ
Output Leakage Current
GND
≤ VI ≤ VDD, Output Disabled
–5
5
µA
IOS
Output Short Circuit Current
VDD = Max., VOUT = GND
–300
mA
IDD
VDD Operating Supply Current
VDD = Max., IOUT = 0 mA,
f = fMAX= 1/tCYC
8.0-ns cycle, 117 MHz
220
mA
10-ns cycle, 100 MHz
205
mA
ISB1
Automatic CE Power-Down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = fMAX,
inputs switching
8.0-ns cycle, 117 MHz
85
mA
10-ns cycle, 100 MHz
80
mA
ISB2
Automatic CE Power-Down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
All speeds
35
mA
ISB3
Automatic CE Power-Down
Current—CMOS Inputs
Max. VDD, Device Deselected,
VIN≥VDDQ – 0.3V or VIN ≤ 0.3V,
f = fMAX, inputs switching
8.0-ns cycle, 117 MHz
70
mA
10-ns cycle, 100 MHz
65
mA
ISB4
Automatic CE Power-Down
Current—TTL Inputs
Max. VDD, Device Deselected,
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
All speeds
18
mA
Notes:
7. Overshoot: VIH(AC) < VDDQ +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).
8. TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.