PBLS4003Y datasheet(4/11 Pages) PHILIPS

Part #	PBLS4003Y

Description	40 V PNP BISS loadswitch

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 11 page

9397 750 15222

Product data sheet

Rev. 02 — 14 July 2005

4 of 11

Philips Semiconductors

PBLS4003Y; PBLS4003V

40 V PNP BISS loadswitch

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 8:

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat transistor

ICBO

collector-base cut-off

current

VCB = −40 V; IE =0A

-

−100

nA

VCB = −40 V; IE =0A;

Tj = 150 °C

--

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

-

−100

nA

hFE

DC current gain

VCE = −2 V; IC = −10 mA

200

-

VCE = −2 V; IC = −100 mA

[1] 150

-

VCE = −2 V; IC = −500 mA

[1] 40

-

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

-

−50

mV

IC = −100 mA; IB = −5mA

-

−130

mV

IC = −200 mA; IB = −10 mA

-

−200

mV

IC = −500 mA; IB = −50 mA

[1] --

−350

mV

RCEsat

collector-emitter

saturation resistance

IC = −500 mA; IB = −50 mA

[1] -

440

700

m

Ω

VBEsat

base-emitter

saturation voltage

IC = −500 mA; IB = −50 mA

[1] --

−1.2

V

VBEon

base-emitter

turn-on voltage

VCE = −2 V; IC = −100 mA

[1] --

−1.1

V

fT

transition frequency

IC = −100 mA; VCE = −5V;

f = 100 MHz

100

300

-

MHz

Cc

collector capacitance

VCB = −10 V; IE =ie =0A;

f=1MHz

-

10

pF

TR2; NPN resistor-equipped transistor

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A

-

100

nA

ICEO

collector-emitter

cut-off current

VCE = 30 V; IB =0A

-

1

µA

VCE = 30 V; IB =0A;

Tj = 150 °C

--

50

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC =0A

-

400

µA

hFE

DC current gain

VCE =5V; IC = 5 mA

30

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

-

150

mV

VI(off)

off-state input voltage VCE =5V; IC = 100 µA

-

1.1

0.8

V

VI(on)

on-state input voltage VCE = 0.3 V; IC = 10 mA

2.5

1.8

-

V

R1

bias resistor 1 (input)

7

10

13

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2

Cc

collector capacitance

VCB = 10 V; IE =ie =0A;

f=1MHz

-

2.5

pF

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