4-599
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1
2
3
4
RF3376
GENERAL PURPOSE AMPLIFIER
• Basestation Applications
• Broadband, Low-Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low-Power Applications
• High Reliability Applications
The RF3376 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50
Ω input and output
impedances and requires only two external DC-biasing
elements to operate as specified.
• DC to >6000MHz Operation
• Internally Matched Input and Output
• 22dB Small Signal Gain
• +2.0dB Noise Figure
• +11dBm Output P1dB
RF3376
General Purpose Amplifier
RF3376PCBA-410 Fully Assembled Evaluation Board
0
Rev A5 050310
Shaded lead is pin 1.
Dimensions in mm.
0.43
0.38
1.60
1.40
1.75
1.40
1.80
1.45
0.53
0.41
1.04
0.80
0.50
0.30
4.60
4.40
2.60
2.40
3.10
2.90
0.48
0.36
2 PL
Package Style: SOT89
Pb-Free Product
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