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SGC-4363Z Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES

Part # SGC-4363Z
Description  50-4000 MHz Silicon Germanium Cascadable Gain Block
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Manufacturer  SIRENZA [SIRENZA MICRODEVICES]
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Preliminary Information
Broomfield, CO 80021
1
EDS-104977 Rev A
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Product Description
SGC-4363Z Pb
RoHS Compliant
&
Package
Green
50-4000 MHz Silicon Germanium
Cascadable Gain Block
Product Features
Single Fixed 3V Supply
Supply Dropping Resistor not required
Patented Self-Bias Circuitry
P1dB = 12.4 dBm at 1950 MHz
IP3 = 26.6 dBm at 1950 MHz
Robust 1000V ESD, Class 1C HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Sirenza Microdevices’ SGC-4363Z is a high performance SiGe HBT MMIC
amplifier utilizing a Darlington configuration with a patented active bias
network. The active bias network provides stable current over temperature
and process Beta variations. Designed to run directly from a 3V supply, the
SGC-4363Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SGC-4363Z is designed for high linearity 3V gain
block applications that require small size and minimal external components.
It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a
post annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. The package body is manufactured
with green molding compounds that contain no antimony trioxide or
halogenated fire retardants.
Gain & Return Loss
VD = 3V, ID = 52mA (Typ.)
0
5
10
15
20
01
234
Frequency (GHz)
-40
-30
-20
-10
0
S22
S21
S11
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
850 MHz
16.7
1950 MHz
13.0
2400 MHz
11.8
850 MHz
13.3
1950 MHz
12.4
2400 MHz
11.8
850 MHz
28.8
1950 MHz
26.6
2400 MHz
25.5
IRL
Input Return Loss
dB
1950 MHz
15.5
ORL
Output Return Loss
dB
1950 MHz
12.9
NF
Noise Figure
dB
1930 MHz
4.0
VD
Device Operating Voltage
V
3
ID
Device Operating Current
mA
48
52
56
Rth, j-l
Thermal Resistance (junction to lead)
°C/W
180
Small Signal Gain
G
P1dB
Bias Tee Data
ZS = ZL = 50 Ohms
Pout per tone = -5 dBm
Test Conditions:
VD = 3.0V
ID = 52mA Typ.
TL = 25°C
OIP3 Tone Spacing = 1MHz
OIP3
Output Third Order Intercept Point
Output Power at 1dB Compression
dB
dBm
dBm


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