Composite Transistors

1

Publication date: August 2004

SJJ00299AED

UP03312

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

For digital circuits

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• UNR1112 + UNR1212

■ Absolute Maximum Ratings T

a

= 25°C

Marking Symbol: 4P

Internal Connection

Tr1

Tr2

2

(B1)

1

(E1)

3

(E2)

(C1,B2)

5

(C2)

4

R2

22 k

Ω

R2

22 k

Ω

R1

22 k

Ω

R1

22 k

Ω

Parameter

Symbol

Rating

Unit

Tr1

Collector-base voltage

50

V

(Emitter open)

Collector-emitter voltage

50

V

(Base open)

Collector current

100

mA

Tr2

Collector-base voltage

−50

V

(Emitter open)

Collector-emitter voltage

−50

V

(Base open)

Collector current

−100

mA

Overall

Total power dissipation

125

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Unit: mm

1: Emitter (Tr1)

4: Collector (Tr2)

2: Base (Tr1)

5: Collector (Tr1)

3: Emitter (Tr2)

Base (Tr2)

SSMini5-F2 Package

–0.02

+0.05

0.20

(0.30)

(0.50)

123

54

(0.50)

Display at No.1 lead

5˚