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NX29F010 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part No. NX29F010
Description  1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY
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Maker  ETC1 [List of Unclassifed Manufacturers]
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NX29F010 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

 
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NX29F010
2
NexFlash Technologies, Inc.
NXPF001F-0600
06/22/00 ©
WE
STATE
CONTROL
COMMAND
REGISTER
CE
OE
PGM VOLTAGE
GENERATOR
CHIP ENABLE/
OUTPUT ENABLE
LOGIC
ERASE VOLTAGE
GENERATOR
INPUT/OUTPUT
BUFFERS
DATA
LATCH
STB
STB
Y-DECODER
X-DECODER
Y-GATING
CELL
MATRIX
VCC
DETECTOR
TIMER
VCC
GND
A0-A16
DQ7-DQ0
8
8
8
8
8
8
Figure 1. NX29F010 Block Diagram
Executing the Erase Command Sequence invokes the
Embedded Erase Algorithm, an internal algorithm that
automatically pre-programs the array to all zeros (if it is not
already programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin during erase.
By reading the DQ7 (
Data Polling) and DQ6 (toggle) status
bits, the host system can detect whether a program or erase
operation is complete. After completion, the device is ready
to read array data or accept another command.
The sector erase architecture is designed to allow memory
sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is erased
before it is shipped to customers.
The hardware data protection includes a low Vcc detector
that automatically inhibits write operations during power
transitions. The hardware sector protection feature will
disable both program and erase operations in any combina-
tion of the sectors of memory, and is implemented using
standard EPROM programming algorithm.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. Data are
programmed one byte at a time using the EPROM program-
ming algorithm of hot electron injection.


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