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XR1004 Datasheet(PDF) 4 Page - Mimix Broadband

Part No. XR1004
Description  30.0-46.0 GHz GaAs MMIC Receiver
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Maker  MIMIX [Mimix Broadband]
Homepage  http://www.mimixbroadband.com
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XR1004 Datasheet(HTML) 4 Page - Mimix Broadband

   
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 4 of 7
May 2005 - Rev 13-May-05
30.0-46.0 GHz GaAs MMIC
Receiver
R1004
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1, Vd2 and Vd3 with
Vd(1,2,3)=4.0V, Id1=Id2=25mA and Id3=145mA. Additionally, a mixer and doubler bias are also required with Vg4=Vg5=-0.5V. Adjusting Vg4
and Vg5 above or below this value can adversely affect conversion gain, image rejection and intercept point performance. It is also
recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible
results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is
protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is
available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2,3 and Vg1,2,3,4,5) needs to have DC bypass capacitance (~100-200 pF) as close to the device
as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
Typical Application
Mimix Broadband's 30.0-46.0 GHz XR1004 GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes
up to 128 QAM. The receiver can be used in upper and lower sideband applications from 30.0-46.0 GHz.
IR Mixer
LNA
Mimix Broadband MMIC-based 30.0-46.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 46 GHz)
RF IN
37.0-39.5 GHz
XR1004
BPF
Coupler
IF Out
2 GHz
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
AGC Control
Buffer
X2
MTTFTable (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions: Vd1=Vd2=Vd3=4.0V, Id1=Id2=25 mA, Id3=145 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.


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