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SI4416DY-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4416DY-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si4416DY Vishay Siliconix Document Number: 72266 S-31062—Rev. E, 26-May-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 0.00 0.02 0.04 0.06 0.08 0.10 0 10203040 50 0 2 4 6 8 10 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 Crss Coss Ciss VDS = 15 V ID = 9 A VGS = 10 V ID = 9 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) ID = 9 A On-Resistance vs. Gate-to-Source Voltage VGS - Gate-to-Source Voltage (V) VGS = 4.5 V |
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