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SI4416DY-T1 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # SI4416DY-T1
Description  N-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4416DY-T1 Datasheet(HTML) 3 Page - Vishay Siliconix

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Si4416DY
Vishay Siliconix
Document Number: 72266
S-31062—Rev. E, 26-May-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.00
0.02
0.04
0.06
0.08
0.10
0
2468
10
0.00
0.02
0.04
0.06
0.08
0.10
0
10203040
50
0
2
4
6
8
10
0
5
10
15
20
25
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
Crss
Coss
Ciss
VDS = 15 V
ID = 9 A
VGS = 10 V
ID = 9 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ - Junction Temperature (_C)
1.0
1.2
1
10
60
0.00
0.2
0.4
0.6
0.8
TJ = 25_C
TJ = 150_C
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
ID = 9 A
On-Resistance vs. Gate-to-Source Voltage
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V


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