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M68701 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M68701
Description  SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M68701 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
M68701
MITSUBISHI RF POWER MODULE
Nov. ´97
8.3±1
43.3±1
21.3±1
50.4±1
51.3±1
OUTLINE DRAWING
PIN:
Pin
: RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO
: RF OUTPUT
GND: FIN
Dimensions in mm
1
2
3
4
5
Symbol
Parameter
Test conditions
Limits
Min
Max
Unit
f
PO
ηT
2fO
ρin
-
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Load VSWR tolerance
VDD=12.5V,
VGG=5V,
Pin=1mW
VDD=15.2V, Pin=1mW,
PO=6W (VGG adjust), ZL=20:1
820
851
6
35
-30
No degradation or
destroy
MHz
W
%
dBc
-
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS (Tc=25
°C,ZG=ZL=50Ω unless otherwise noted)
Symbol
Parameter
Conditions
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25
°C unless otherwise noted)
Note. Above parameters are guaranteed independently.
V
17
VDD
Supply voltage
V
5.5
VGG
Gate bias voltage
mW
10
Pin
Input power
W
10
PO
Output power
°C
-30 to +100
TC (OP)
Operation case temperature
°C
-40 to +100
Tstg
Storage temperature
VGG
≤3.5V, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50
f=820-851MHz, ZG=ZL=50
f=820-851MHz, ZG=ZL=50
Stability
4
60.5±1
57.5±0.5
1
2
3
4
5
0.45±0.2
ZG=ZL=50
Ω, VDD=10-16V,
Load VSWR
<4:1
-
-
No parasitic oscillation
2-R1.6
+0.2
0
BLOCK DIAGRAM
4
5
3
2
1


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